Selective-Area Growth of Heavily n–Doped GaAs Nanostubs on Si(001) by Molecular Beam Epitaxy
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منابع مشابه
Direct observation of precipitates and self-organized nanostructures in molecular-beam epitaxy grown heavily doped GaAs:Si
We report a cross-sectional scanning tunneling microscopy investigation of heavily Si doped @001#-oriented GaAs grown by molecular-beam epitaxy. At a very high doping level (6 310 cm), Si-doping induced precipitates are directly observed in XSTM images of the as-grown epitaxial layers. Most of the precipitates are found to have a characteristic oval shape with the long axis ~;80 Å! along the gr...
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تاریخ انتشار 2016